Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-07-25
2008-11-04
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S264000, C438S287000, C438S288000, C438S260000, C438S591000, C438S593000, C977S774000, C977S779000, C977S780000, C977S943000, C257SE21423
Reexamination Certificate
active
07445984
ABSTRACT:
A method of making a semiconductor device includes a substrate having a semiconductor layer having a first portion for non-volatile memory and a second portion exclusive of the first portion. A first dielectric layer is formed on the semiconductor layer. A plasma nitridation is performed on the first dielectric layer. A first plurality of nanoclusters is formed over the first portion and a second plurality of nanoclusters over the second portion. The second plurality of nanoclusters is removed. A second dielectric layer is formed over the semiconductor layer. A conductive layer is formed over the second dielectric layer.
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Luo Tien Ying
Muralidhar Ramachandran
Rao Rajesh A.
Steimle Robert F.
Straub Sherry G.
Clingan, Jr. James L.
Estrada Michelle
Freescale Semiconductor Inc.
King Robert L.
Parendo Kevin A
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