Method for removing nanoclusters from selected regions

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S264000, C438S287000, C438S288000, C438S260000, C438S591000, C438S593000, C977S774000, C977S779000, C977S780000, C977S943000, C257SE21423

Reexamination Certificate

active

07445984

ABSTRACT:
A method of making a semiconductor device includes a substrate having a semiconductor layer having a first portion for non-volatile memory and a second portion exclusive of the first portion. A first dielectric layer is formed on the semiconductor layer. A plasma nitridation is performed on the first dielectric layer. A first plurality of nanoclusters is formed over the first portion and a second plurality of nanoclusters over the second portion. The second plurality of nanoclusters is removed. A second dielectric layer is formed over the semiconductor layer. A conductive layer is formed over the second dielectric layer.

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