Method for removing etching residues and contaminants

Details Method for removing etching residues and contaminants Method for removing etching residues and contaminants

1998-10-01

2000-04-04

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438725, 438906, 134 12, 216 67, 430329, H01L 213065

Patent

active

060461152

ABSTRACT:
A gas plasma process without argon sputtering for removing photoresist, etch residues and other contaminants involved in etching vias in integrated circuit devices is disclosed. The process involves placing the substrate having etched vias or contact holes in a suitable low bias reactor; applying to the substrate surface a mixture of gases at low bias selected from the group consisting of oxygen, nitrogen, fluorine, hydrofluorocarbon and fluorinated methane and amine gases to both remove the photoresist layer and alter the composition of the residues such that the residues are soluble in water; and rinsing the substrate with deionized water. The plasma process should be carried out at temperatures of less than about 100 degrees C. to avoid mobile ion contamination problems and oxidation of the etch residues.

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patent: 5849639 (1998-12-01), Molloy et al.
patent: 5882489 (1999-03-01), Bersin et al.

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