Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2005-08-23
2005-08-23
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S706000, C438S723000
Reexamination Certificate
active
06933235
ABSTRACT:
A method of processing a substrate is disclosed. The method includes depositing a dielectric layer having a metal oxide on a substrate. A portion of the dielectric layer is removed to form a dielectric structure, thereby exposing a surface of the substrate. For example, the dielectric layer may be patterned using standard photolithographic techniques and etching. An oxide layer is then formed on the exposed surface of the substrate. The oxide layer may be formed using ozone that is generated using ultraviolet radiation. After the oxide layer is formed, it is removed using an etching process.
REFERENCES:
patent: 5656852 (1997-08-01), Nishioka et al.
patent: 6066572 (2000-05-01), Lu et al.
patent: 6291283 (2001-09-01), Wilk
patent: 6368949 (2002-04-01), Chen et al.
patent: 6475927 (2002-11-01), Thakur
patent: 6818493 (2004-11-01), Hobbs et al.
patent: 2002/0146888 (2002-10-01), Ryu et al.
Ghandhi, Sorab K, VLSI Fabrication Principles Silicon and Gallium Arsenide, 1983 John Wiley and Sons, pp. 517-518.
Ghandhi, Sorab K.; VLSI Fabrication Principles: Silicon and Gallium Arsenide; 1983; John Wiley and Sons; pp. 517-518.
El Bouanani Mohamed
Gnade Bruce E.
Quevedo-Lopez Manuel A.
Wallace Robert M.
Aston David J.
Fourson George
Maldonado Julio J.
Peters Verny Jones Schmitt & Aston, LLP
The Regents of the University of North Texas
LandOfFree
Method for removing contaminants on a substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for removing contaminants on a substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for removing contaminants on a substrate will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3477883