Method for removing conductive residue

Details Method for removing conductive residue Method for removing conductive residue

2005-08-23

2005-08-23

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C438S714000, C216S022000, C134S001100

Reexamination Certificate

active

06933239

ABSTRACT:
A method for removing conductive residue from a layer on a semiconductor substrate by exposing the substrate to a gas comprising a fluorine containing gas and a hydrogen containing gas. In one embodiment, the gas is excited to form a plasma that removes the conductive residue during fabrication of a magneto-resistive random access memory (MRAM) device.

REFERENCES:
patent: 4253907 (1981-03-01), Parry et al.
patent: 6024885 (2000-02-01), Pendharkar et al.
patent: 6051505 (2000-04-01), Chu et al.
patent: 6242350 (2001-06-01), Tao et al.
patent: 6277733 (2001-08-01), Smith
patent: 6342446 (2002-01-01), Smith et al.
patent: 6355576 (2002-03-01), Haley et al.

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