Method for removing a pore-generating material from an...

Details Method for removing a pore-generating material from an... Method for removing a pore-generating material from an...

2011-07-12

2011-07-12

Nguyen, Khiem D (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257SE21211, C257SE21324, C257SE21328, C257SE21471

Reexamination Certificate

active

07977256

ABSTRACT:
A method of forming a porous low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The method comprises exposing the low-k dielectric film to infrared (IR) radiation and adjusting a residual amount of cross-linking inhibitor, such as pore-generating material, within the low-k dielectric film.

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