Method for removal of photoresist using sparger

Etching a substrate: processes – Nongaseous phase etching of substrate – Recycling – regenerating – or rejunevating etchant

Reexamination Certificate

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C216S083000, C438S689000

Reexamination Certificate

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06863836

ABSTRACT:
A method of removing photoresist from semiconductor wafers through the use of a sparger plate. According to the inventive method, at least one semiconductor wafer is positioned in a process tank above the sparger plate. A mixture of ozone and deionized water is introduced into the process tank at a position below the sparger plate. The mixture of ozone and deionized water is then introduced across the wafer via the sparger plate at an increased flow velocity while the wafer is submerged in the mixture of deionized water and ozone.

REFERENCES:
patent: 5464480 (1995-11-01), Matthews
patent: 6080531 (2000-06-01), Carter et al.
patent: 6187216 (2001-02-01), Dryer et al.
patent: 2000164552 (2000-06-01), None

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