Method for removal of photoresist over metal which also removes

Details Method for removal of photoresist over metal which also removes Method for removal of photoresist over metal which also removes

1991-08-26

1993-04-06

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156668, 156664, H01L 2100

Patent

active

052000311

ABSTRACT:
A process is described for removing, from an integrated circuit structure, photoresist remaining after one or more metal etch steps which also removes or inactivates a sufficient amount of remaining chlorine-containing residues from the previous metal etch steps to inhibit corrosion of remaining metal for at least 24 hours. The process includes a first stripping step which comprises flowing NH.sub.3 gas through a microwave plasma generator into a stripping chamber which contains the integrated circuit structure while maintaining a plasma in the plasma generator. O.sub.2 gas (and optionally NH.sub.3 gas) is flowed through the plasma generator into the stripping chamber during a second step while maintaining the plasma in the plasma generator.

REFERENCES:
patent: 4308089 (1981-12-01), Iida et al.
patent: 4687544 (1987-08-01), Bersin
patent: 4885047 (1989-12-01), Ury et al.
patent: 4919748 (1990-04-01), Bredtenner et al.
Toy, David A., "Choose the Right Process to Strip Your Photoresist", Semiconductor International, Feb. 1990, pp. 82-87.

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