Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2006-06-08
2009-06-23
Dinh, Son (Department: 2824)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S189070
Reexamination Certificate
active
07551503
ABSTRACT:
A plurality of cells of a flash memory are tested to determine if they need to be refreshed. The cells are read and a plurality of different sensing ratios are used to determine if any of the cells need to be refreshed. Any cells that are determined to need refreshing are refreshed. The cells are read using only a single constant gate voltage.
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onvolmem.html, printout date: Jun. 6, 2006, 21 pages.
Dinh Son
Jiang Chyun IP Office
MACRONIX International Co. Ltd.
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