Method for reduction of soft error rates in integrated circuits

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S555000, C438S614000, C257SE23021, C257SE23169

Reexamination Certificate

active

07601627

ABSTRACT:
A method for reduction of soft error rates in integrated circuits. The method including: providing a test device, the test device comprising: a semiconductor substrate; and a stack of one or more wiring levels stacked from a lowermost wiring level to an uppermost wiring level, the lowermost wiring level on a top surface of the substrate; selecting an energy of alpha particles of a given energy to be stopped from penetrating through the stack of one or more wiring levels; bombarding the semiconductor substrate with a flux of the alpha particles of the selected energy; and determining a combination of a thickness of a blocking layer and a volume percent of metal wires in the blocking layer sufficient to stop a predetermined percentage of alpha particles of the maximum energy striking a top surface of the blocking layer from penetrating through the stack of one or more wiring levels.

REFERENCES:
patent: 2005/0186326 (2005-08-01), Baumann
patent: 2006/0150128 (2006-07-01), Zhu et al.

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