Method for reduction of plasma charging damage during chemical v

Details Method for reduction of plasma charging damage during chemical v Method for reduction of plasma charging damage during chemical v

1996-12-23

1999-06-15

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438761, 438788, H01L 21316

Patent

active

059131403

ABSTRACT:
A graded gap fill process in which, in a high density plasma processing chamber, an insulating layer is deposited on a substrate without causing plasma charge-related damage to the substrate. The insulating layer is disposed above a first layer having trenches formed therein and below a subsequently deposited second layer. A protection layer is first deposited above the first layer using a first set of deposition parameters. This protection layer coats a surface of the first layer in a substantially conformal manner without forming voids in the trenches. A fill layer is then deposited above the protection layer using a second set of deposition parameters. The first set of deposition parameters is selected to reduce plasma charge-related damage relative to the second set of deposition parameters. The combination of the protection layer and the fill layer sufficiently electrically isolates the first layer from the second layer.

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