Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-12-02
1998-09-15
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438688, 438974, H01C 214762
Patent
active
058077871
ABSTRACT:
A method is achieved for reducing the surface leakage current between adjacent bonding pads on integrated circuit substrates after forming a patterned polyimide passivation layer. When the polyimide layer is patterned to open contacts areas over the bonding pads, plasma ashing in oxygen is used to remove residual polyimide that otherwise causes high contact resistance, and poor chip yield. This plasma ashing also modifies the insulating layer between bonding pads resulting in an unwanted increase in surface leakage currents between bonding pads. The passivation process is improved by using a thermal treatment step in either a nitrogen or air ambient after the plasma ashing to essentially eliminate the increased surface leakage current and improve chip yield.
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Chao Ying-Chen
Fu Wen-Jui
Lan Ho-Ku
Ackerman Stephen B.
Berry Renee R.
Bowers Jr. Charles L.
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
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