Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-10-24
2006-10-24
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
Reexamination Certificate
active
07125768
ABSTRACT:
The present invention includes a method for reducing random bit data loss in a memory circuit. The method comprises a semiconductor layer that has a surface. The semiconductor layer is exposed at an elevated temperature to an atmosphere comprising deuterium thereby forming a film on the semiconductor layer comprising deuterium. A memory circuit is fabricated on or within the semiconductor layer.
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Booth Richard A.
Micro)n Technology, Inc.
Schwegman Lundberg Woessner & Kluth P.A.
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