Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Reexamination Certificate
2005-09-13
2005-09-13
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
C438S029000
Reexamination Certificate
active
06943128
ABSTRACT:
To lower the electrical resistance of a p-type semiconductor or the operation voltage of a light-emitting/light-receiving semiconductor device. An ion-plasma-type electron-beam irradiation apparatus100generates wide-area-radiation electron beams. The thus-generated electron beams are radiated to the outside through a thin metallic plate108formed on the outer surface of a beam extraction window107. A p-type semiconductor is disposed below the beam extraction window107such that the p-type semiconductor is disposed about 20 mm away from the electron extraction window so as to be almost parallel to the metallic plate108. When the surface of the p-type semiconductor is irradiated with electron beams by use of this apparatus, the electrical resistance of the p-type semiconductor can be effectively lowered within a short period of time; i.e., within about three minutes, which is considerably shorter than the time required in the case where a conventional electron-beam irradiation apparatus is employed. No particular limitation is imposed on the area of the beam extraction window107, and thus wide-area-radiation electron beams are generated, and as a result, scanning with electron beams is not required to be repeated over a long period of time.
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English translation of International Preliminary Examination Report dated Jun. 25, 2003.
Chiyo Toshiaki
Shibata Naoki
Fourson George
McGinn & Gibb PLLC
Toledo Fernando L.
Toyoda Gosei Co,., Ltd.
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