Method for reducing reflectivity of a metal layer

Details Method for reducing reflectivity of a metal layer Method for reducing reflectivity of a metal layer

1995-04-28

1999-03-30

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438718, 438722, 438723, H01L 2100

Patent

active

058889086

ABSTRACT:
A method is provided for reducing the reflectivity of a metal layer prior to photolithography. A thin buffer layer, such as oxide, can be deposited over the metal layer. A short plasma etch is performed in order to roughen, but not completely remove, the thin oxide layer. This roughened layer significantly reduces the reflectivity of the underlying metal layer. As an alternative, the brief plasma etch can be applied directly to the metal layer, which results in a significant roughening of its upper surface. This also reduces the reflectivity of the metal layer.

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