Method for reducing microloading in etching high aspect...

Details Method for reducing microloading in etching high aspect... Method for reducing microloading in etching high aspect...

2007-06-04

2009-12-08

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S700000, C438S622000, C438S508000

Reexamination Certificate

active

07629255

ABSTRACT:
A method for etching features of different aspect ratios in a conductive layer is provided. The method comprises: depositing over the conductive layer with an aspect ratio dependent deposition; etching features into the conductive layer with an aspect ratio dependent etching of the conductive layer; and repeating the depositing and the etching at least once.

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patent: 2004/0023499 (2004-02-01), Hellig et al.
patent: 2006/0160366 (2006-07-01), Lu et al.
patent: 2008/0064202 (2008-03-01), Takewaki
patent: 08-115900 (1996-05-01), None
patent: 2004-241586 (2004-08-01), None
patent: 2006-523030 (2006-10-01), None
International Search Report dated Sep. 30, 2008 for International Application No. PCT/US2008/065512.
Written Opinion dated Sep. 30, 2008 for International Application No. PCT/US2008/065512.

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