Method for reducing low frequency noise of transistor

Details Method for reducing low frequency noise of transistor Method for reducing low frequency noise of transistor

2009-03-18

2011-11-01

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having junction gate

C438S795000, C257S256000, C257S272000, C257SE21400

Reexamination Certificate

active

08048731

ABSTRACT:
A method for reducing low frequency noise of a transistor operable at cryogenic temperatures includes a first step in which the transistor is illuminated with a light in a state that the transistor is activated and flowed current by supplying a power at a predetermined temperature, and a second step in which the transistor is operated at the predetermined temperature after the illumination of the light.

REFERENCES:
patent: 4144591 (1979-03-01), Brody
patent: 4786809 (1988-11-01), Norton
patent: 5907168 (1999-05-01), Childs
patent: 6773936 (2004-08-01), Fujiwara et al.
patent: 2003/0183750 (2003-10-01), Akiba
M. Fjuiwara, M. Sasaki and M. Akiba; Reduction method for low-frequency noise of GaAs junction field-effect transistor at a cryogenic temperature; Applied Physics Letters; vol. 80, No. 10, Mar. 11, 2002, pp. 1844-1846.
Mikio Fujiwara and Masahide Sasaki; Performance of GaAs JFET at a Cryogenic Temperature for Application to Readout Circuit of High-Impedance Detectors; IEEE Transactions on Electron Devices, vol. 51, No. 12, Dec. 2004, pp. 2042-2047.
A. J. Seeds and J. R. Forrest, Reduction of FM Noise in IMPATT Oscillators by Optical Illumination; Electronics Letters, vol. 17, No. 23, Nov. 12, 1981, pp. 865-866.
P. Chakrabarti; Noise Behavior of an Optically Controlled GaAs MESFET; Journal of Lightwave Technology, vol. 22, No. 2, Feb. 2004, pp. 534-542.
Enrico Prati and Marco Fanciulli; Effect of the triplet state on the random telegraph signal in Si n-MOSFETs; Physical Review B 74, 033309 (2006), pp. 1-4.

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