Method for reducing layout-dependent variations in...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

07598130

ABSTRACT:
A method for forming an integrated circuit includes providing a semiconductor substrate, forming a re-implantation blocking layer over the semiconductor substrate, forming a mask over the re-implantation blocking layer, patterning the mask to form an opening, wherein a portion of the re-implantation blocking layer is exposed through the opening, performing an implantation to introduce an impurity into a portion of the semiconductor substrate underlying the opening to form a well region, removing the mask, and removing the re-implantation blocking layer.

REFERENCES:
patent: 5525529 (1996-06-01), Guldi
patent: 5960332 (1999-09-01), Michalzik
patent: 6232185 (2001-05-01), Wang
patent: 6566215 (2003-05-01), Chong et al.
patent: 6773994 (2004-08-01), Chittipeddi et al.
patent: 7176113 (2007-02-01), Wong et al.
patent: 2003/0119237 (2003-06-01), Chittipeddi et al.
patent: 2003/0162374 (2003-08-01), Brown et al.
patent: 2003/0228741 (2003-12-01), Schafbauer et al.
patent: 2004/0214379 (2004-10-01), Lee et al.
patent: 2007/0037343 (2007-02-01), Colombo et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for reducing layout-dependent variations in... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for reducing layout-dependent variations in..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for reducing layout-dependent variations in... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4053019

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.