Method for reducing hot carrier effect of MOS transistor

Details Method for reducing hot carrier effect of MOS transistor Method for reducing hot carrier effect of MOS transistor

2007-07-30

2009-08-25

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S229000, C438S230000, C438S233000, C257SE21029, C257SE21035, C257SE21252

Reexamination Certificate

active

07579250

ABSTRACT:
A semiconductor device structure is described, including a MOS transistor, a silicon-rich silicon nitride layer having a refractive index of about 2.00-2.30, and a dielectric layer. The silicon-rich silicon nitride layer is disposed between the MOS transistor and the dielectric layer, and covers the source/drain region, the spacer and the gate conductor of the MOS transistor.

REFERENCES:
patent: 5707889 (1998-01-01), Hsu et al.
patent: 2005/0179115 (2005-08-01), Rossi et al.

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