Method for reducing electromigration in a copper interconnect

Details Method for reducing electromigration in a copper interconnect Method for reducing electromigration in a copper interconnect

1997-09-25

2000-03-28

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438627, 438643, 438675, H01L 2144

Patent

active

060431539

ABSTRACT:
A system and method for providing copper interconnect in a trench formed in a dielectric is disclosed. In one aspect, the method and system include providing a copper layer; removing a portion of the copper layer outside of the trench; annealing the copper layer; and providing a layer disposed above the copper layer. In another aspect, the method and system include providing a copper interconnect formed in a trench on a dielectric. The copper interconnect includes a copper layer disposed in the trench and a layer disposed above the copper layer. The copper layer has a bamboo structure at least one grain. The at least one grain has substantially one orientation.

REFERENCES:
patent: 5656858 (1997-08-01), Kondo et al.
patent: 5714418 (1998-02-01), Bai et al.
patent: 5736458 (1998-04-01), Teng
patent: 5814557 (1998-09-01), Venkatraman et al.

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