Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-08-30
2011-08-30
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S622000, C438S626000, C438S631000, C438S633000, C257SE21576, C257SE21580, C257SE21585
Reexamination Certificate
active
08008187
ABSTRACT:
A substantially planar surface coexposes conductive or semiconductor features and a dielectric etch stop material. A second dielectric material, different from the dielectric etch stop material, is deposited on the substantially planar surface. A selective etch etches a hole or trench in the second dielectric material, so that the etch stops on the conductive or semiconductor feature and the dielectric etch stop material. In a preferred embodiment the substantially planar surface is formed by filling gaps between the conductive or semiconductor features with a first dielectric such as oxide, recessing the oxide, filling with a second dielectric such as nitride, then planarizing to coexpose the nitride and the conductive or semiconductor features.
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