Method for reducing defects of gate of CMOS devices during...

Details Method for reducing defects of gate of CMOS devices during... Method for reducing defects of gate of CMOS devices during...

2009-03-04

2011-10-18

Sandvik, Benjamin (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21642

Reexamination Certificate

active

08039338

ABSTRACT:
By incorporating nitrogen into the P-doped regions and N-doped regions of the gate electrode material prior to patterning the gate electrode structure, yield losses due to reactive wet chemical cleaning processes may be significantly reduced.

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