Method for reducing contact resistance

Details Method for reducing contact resistance Method for reducing contact resistance

1996-01-29

1997-09-23

Niebling, John

Fishing, trapping, and vermin destroying

437228, 1566511, 1566621, H01L 2128

Patent

active

056704267

ABSTRACT:
A method for substantially improving the electrical characteristics of contact surfaces in contact holes and via holes that are formed in semiconductor substrates is disclosed. The method involves, in particular, the introduction of an "after-etch" process, subsequent to the application of prior art methods of "main-etch," "over-etch," and "soft-etch" that are employed in opening holes in semiconductors, in general. The said process uses an isotropic dry etch assisted by argon gas ions in such a way that the area of the contact surfaces are increased manyfold through the formation of three-dimensional structures. It is shown that the resulting electrical contact resistance of the surfaces is reduced, and therefore, improved substantially.

REFERENCES:
patent: 5270256 (1993-12-01), Bost et al.
patent: 5409861 (1995-04-01), Choi
patent: 5458266 (1995-10-01), Tsai et al.
patent: 5560857 (1996-10-01), Sakon et al.

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