Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-04-23
1998-08-11
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438241, H01L 218238
Patent
active
057926824
ABSTRACT:
A circuit is designed with a decoder circuit (10), responsive to a first input signal (81) having a first voltage range, for producing a first output signal. An output circuit (11), responsive to the first output signal, produces a second output signal (26) having a second voltage range. The second voltage range includes a voltage less than a least voltage of the first voltage range and a voltage greater than a greatest voltage of the first voltage range.
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patent: 5363338 (1994-11-01), Oh
patent: 5410508 (1995-04-01), McLaury
patent: 5650346 (1997-07-01), Pan et al.
Koelling Jeffrey
McAdams Hugh P.
Chaudhari Chandra
Donaldson Richard L.
Rountree Robert N.
Telecky J. Fred
Texas Instruments Incorporated
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