Method for reducing amine based contaminants

Details Method for reducing amine based contaminants Method for reducing amine based contaminants

2006-12-26

2006-12-26

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

C438S710000, C438S438000, C438S723000, C438S725000

Reexamination Certificate

active

07153776

ABSTRACT:
A method for reducing resist poisoning is provided. The method includes forming a first structure in a dielectric on a substrate and reducing amine related contaminants from the dielectric and the substrate created after the formation of the first structure. The method further includes forming a second structure in the dielectric. A first organic film may be formed on the substrate which is then heated and removed from the substrate to reduce the contaminant. Alternatively, a plasma treatment or cap may be provided. A second organic film is formed on the substrate and patterned to define a second structure in the dielectric.

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