Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-07-01
2000-08-08
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438761, 438763, 438778, H01L 21336
Patent
active
06100149&
ABSTRACT:
A method of rapid thermal processing (RTP) of a silicon substrate is presented, where a very low partial pressure of reactive gas is used to control etching and growth of oxides on the silicon surface.
REFERENCES:
patent: 4626450 (1986-12-01), Akimiko et al.
patent: 4784975 (1988-11-01), Hofmann et al.
patent: 5279973 (1994-01-01), Yasumassa
patent: 5498577 (1996-03-01), Fulford, Jr. et al.
Copel et al., Effects of surface oxide on rapid thermal nitradation of Si(001), Journal of Vacuum Science Technology A, vol. 14, Issue 2, pp. 462-462, Mar. 1996.
Bauer et al., Structural and electrical properties of thin SiO[sub 2] layers grown by RTP in a mixture of N[sub 2]O and O[sub 2], Journal of non-Crystalline Solids, vol. 187, pp. 361-364, 1995.
Hofmann et al., Hole trapping in SiO[sub 2] films annealed in low-pressure oxygen atmosphere, Journal of Applied Physics, vol. 62(3), pp. 925-930, Aug. 1, 1987.
Rubloff et al., Defect Microchemistry in the SiO[sub 2]/Si Interface, Physical Review Letters, pp. 2379-2382, 1987.
Lu et al., Rapid thermal N[sub 2]O oxinitride on Si(100), Journal of Vacuum Science Technology B, pp. 2882-2887, Jul. 1996.
Ting et l., Composition and growth kinetics of ultrathin SiO[sub 2] films formed by oxidizing Si substrates in N[sub 2]O, Applied Physics Letters, vol. 57 (26), pp. 2808-2810, 1990.
Hofmann et al., Defect formation in thermal SiO[sub 2] by high-temperature annealing, Applied Physics Letters, vol. 49 (22) pp. 1525-1527, 1986.
Hussey, R.J., et al., A study of nitrogen incorporation during the oxidation of Si(100) in N[sub 2]O at high-temperatures, Journal of the Electrochemical Society, vol. 143, No. 1, pp. 221-228, Jan. 1996.
Z. Nenyei et al. "gas flow engineering in rapid thermal processing" Rapid Thermal and Integrated Processign III Symposium, San Francisco, CA, USA Apr. 4-7, 1994 pp. 401-406 Publisher--Materials Research Society, Pittsburgh, PA.
Lerch Wilfried
Nenyei Zsolt
Sommer Helmut
Hack Jonathan
Hodgson Rodney T
Niebling John F.
Steag RTP Systems
LandOfFree
Method for rapid thermal processing (RTP) of silicon substrates does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for rapid thermal processing (RTP) of silicon substrates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for rapid thermal processing (RTP) of silicon substrates will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1149598