Method for providing multiple gate oxide thicknesses on the same

Details Method for providing multiple gate oxide thicknesses on the same Method for providing multiple gate oxide thicknesses on the same

1997-05-20

1999-07-20

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438275, 438299, H01L 218242

Patent

active

059267089

ABSTRACT:
The present invention is directed to a method of manufacturing an integrated circuit with two or more gate oxide thicknesses on the same wafer. The method includes the steps of growing a first oxide layer on a substrate, depositing a first polysilicon layer over the first oxide layer, applying a block mask, etching the first polysilicon layer, stripping the block mask, stripping the first oxide layer from the areas opened by the block mask, growing a second oxide layer, depositing a second polysilicon layer, and polishing the second polysilicon layer to remove the second polysilicon layer from everywhere except the areas opened by the block mask. If desired, a polish stop layer may be deposited after depositing the first polysilicon layer. Threshold implants may also be made after the block mask is stripped. Finally, polysilicon shapes may be added to the boundary areas opened by the block mask to help eliminate foreign material problems.

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