Method for providing device isolation and off-state leakage curr

Details Method for providing device isolation and off-state leakage curr Method for providing device isolation and off-state leakage curr

1995-06-07

1997-04-29

Thomas, Tom

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438525, 438450, H01L 21265

Patent

active

056248598

ABSTRACT:
A method and system for providing a semiconductor device with device isolation and leakage current control which entails processing a semiconductor substrate to form a semiconductor circuit, and providing at least one high energy implant on the semiconductor circuit is disclosed. The high energy implant is provided at an angle to source and drain regions of the semiconductor circuit so as to allow a dosage from the at least one high energy implant below and away from the surface of the active device region. In so doing, a profile is provided in which dopant distribution is substantially uniform. Therefore, the breakdown characteristics are increased and the junction capacitance of the device is reduced. Accordingly, a device manufactured in accordance with the present invention has significant advantages over devices manufactured in accordance with conventional processes.

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