Method for production of semiconductor device

Details Method for production of semiconductor device Method for production of semiconductor device

2011-04-12

2011-04-12

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S302000

Reexamination Certificate

active

07923332

ABSTRACT:
A method for producing a semiconductor device, the method includes the steps of: forming a hard mask layer with a mask opening on a semiconductor substrate in which is formed a source region; forming a side wall mask on the side wall of the mask opening; forming a trench by using the side wall mask and the hard mask layer as a mask in such a way that the trench reaches the source region; removing the side wall mask; forming a gate electrode inside the mask opening and the trench, with a gate insulating film interposed thereunder; forming a side wall on the side wall of the gate electrode; and forming a drain region on the surface of the semiconductor substrate which is adjacent to the gate electrode.

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patent: 2006-013556 (2006-01-01), None

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