Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-01-27
2000-02-08
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438 3, 438655, H01L 218242
Patent
active
060227745
ABSTRACT:
A semiconductor device is produced by a method which comprises forming a conductor pattern in or on a semiconductor layer, covering the surface of the conductor pattern with an antioxidant conductor layer, forming a first insulating layer on the semiconductor layer, forming a lower electrode of a capacitor on the first insulating layer, forming a dielectric layer of an oxygen-containing material on the lower electrode, forming an upper electrode on the dielectric layer, sequentially patterning the upper electrode, the dielectric layer, and the lower electrode in the shape of a capacitor, forming a second insulating layer covering the semiconductor layer, the antioxidant conductor layer, and the capacitor, patterning the second insulating layer thereby simultaneously forming a first opening and a second opening on the upper electrode and the conductor pattern, heating the interiors of the first opening and the second opening and the upper electrode in an oxygen-containing atmosphere, forming a conductor layer overlying the second insulating layer and filling the interiors of the first and second openings, and patterning the conductor layer thereby forming a first wiring connected to the upper electrode through the first opening and a second wiring electrically continuing to the conductor pattern through the second opening.
REFERENCES:
patent: 5352623 (1994-10-01), Kamiyama
patent: 5554559 (1996-09-01), Wolters et al.
patent: 5750419 (1998-05-01), Zafar
Goto Ken-ichi
Kawai Shinichi
Miyazawa Hisashi
Tan Keng
Yamazaki Tatsuya
Chaudhari Chandra
Fujitsu Limited
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