Method for production of semiconductor device

Details Method for production of semiconductor device Method for production of semiconductor device

1998-03-26

2000-07-11

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438685, 438398, 438762, 4271263, H01L 2144, H01L 2130, H01L 2131, H01L 21469

Patent

active

060872616

ABSTRACT:
The method of the production of a semiconductor device including the step of forming the dielectric film on or above the semiconductor substrate, placing the semiconductor substrate and the dielectric film in the atmosphere of reduced pressure and introducing into the atmosphere of reduced pressure the reaction gas for the deposition of metal or metal nitride and the oxidizing gas thereby forming the oxygen-containing conductor film formed of metal or metal nitride on the dielectric film.

REFERENCES:
patent: 4792463 (1988-12-01), Okada et al.
patent: 5393565 (1995-02-01), Suzuki et al.
patent: 5562952 (1996-10-01), Nakahigashi et al.
patent: 5563090 (1996-10-01), Lee et al.
patent: 5628829 (1997-05-01), Foster et al.
patent: 5834371 (1998-11-01), Ameen et al.
patent: 5876788 (1999-03-01), Bronner et al.
patent: 5920775 (1999-07-01), Koh
patent: 5963834 (1999-10-01), Hatano et al.

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