Method for production of a metallic or metal-containing layer

Details Method for production of a metallic or metal-containing layer Method for production of a metallic or metal-containing layer

2005-11-01

2005-11-01

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S643000, C438S627000, C257S751000

Reexamination Certificate

active

06960524

ABSTRACT:
The invention relates to a method for production of a metallic or metal-containing layer (5) by using a pre-cursor on a silicon- or germanium-containing layer, of, in particular, an electronic component, whereby an intermediate layer is applied to the silicon- or germanium-containing layer before the use of the pre-cursor. Said intermediate layer forms a diffusion barrier for at least those elements or the pre-cursor which would etch the silicon- or germanium-containing layer and is itself resistant to etching by the pre-cursor.

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patent: WO 00/06795 (2000-02-01), None

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