Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1997-02-11
1999-01-26
Baxter, Janet C.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430317, 430318, G03C 500
Patent
active
058637079
ABSTRACT:
Sub-micron contacts/vias and conductive lines in a dielectric layer are formed by etching through a photoresist mask containing openings having a dimension less than that achievable by conventional photolithographic techniques. Such minimal size openings are obtained by initially forming an oversized opening by conventional photolithographic techniques and then reducing the size of the opening by forming a sidewall spacer, such as a dielectric sidewall spacer, within the opening. In an embodiment, a plurality of openings are formed in first photoresist layer, each of which openings is provided with a sidewall spacer. The openings are filled with a filling material, such as a second photoresist material, and the photoresist mask and sidewall spacers are removed leaving a plurality of masking portions containing the second photoresist material. An underlying conductive layer is then etched through masking portions to form conductive lines having sub-micron dimensions.
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Advanced Micro Devices , Inc.
Ashton Rosemary
Baxter Janet C.
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