Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-12-25
2007-12-25
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S267000, C438S303000, C438S596000, C257SE21421
Reexamination Certificate
active
11339101
ABSTRACT:
A semiconductor process and apparatus use a predetermined sequence of patterning and etching steps to etch a gate stack (62) formed over a substrate (11) and a first spacer structure (42), thereby forming etched gate structures (72, 74) that are physically separated from one another but that control a substrate channel (71) subsequently defined in the substrate (11) by source/drain regions (82, 102, 84, 104) that are implanted around the etched gate structures (72, 74). Depending on how the first spacer structure (42) is positioned and configured, the channel (71) may be controlled to provide either a logical AND gate (100) or logical OR gate (200) functionality.
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Goktepeli Sinan
Hoefler Alexander B.
Orlowski Marius K.
Cannatti Michael Rocco
Freescale Semiconductor Inc.
Hamilton & Terrile LLP
Lebentritt Michael
Lee Cheung
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