Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-06-11
2009-10-06
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21182, C438S770000, C438S478000, C438S455000
Reexamination Certificate
active
07598145
ABSTRACT:
A method for producing a microelectronic device comprising a plurality of Si1-yGeybased semi-conductor zones (wherein 0<y≦1) that have different respective Germanium contents.
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Clavelier Laurent
Damlencourt Jean-Francois
Morand Yves
Commissariat a l 'Energie Atomique
Diallo Mamadou
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Richards N Drew
STMicroelectronics SA
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