Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1991-08-21
1995-03-14
Breneman, R. Bruce
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156643, 156646, 134 1, H01L 2100
Patent
active
053974328
DESCRIPTION:
BRIEF SUMMARY
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a lithography process for use during the production of semiconductor integrated circuits. More particularly, it relates to the removal of chlorine or bromine which remains on a surface of a conductive film when the conductive film made of aluminum or an alloy thereof is dry-etched by using chlorine or bromine, or an alloy thereof as an etchant.
2. Description of the Related Art
For a wiring forming a semiconductor integrated circuit formed on a substrate, such as silicon wafer or the like, thin films of aluminum (Al) or thin films of an alloy in which silicon (Si) or copper (Co) is added into aluminum are often used. To prevent an increase in the contact resistance of an aluminum or aluminum alloy thin film wiring due to an alloy reaction with a silicon wafer, a so-called barrier metal of a thin film of titanium (Ti), titanium nitride (TiN), or titanium-tungsten (TiW) is provided between the silicon wafer and the aluminum thin film.
Patterning of an aluminum or aluminum alloy film for such wiring as described above is performed generally by a lithography in which the conductive film is selectively etched by using a mask formed of a resist layer. Anisotropic etching is required to make it possible to form fine wiring patterns. At the present time, reactive ion etching (RIE) is a typical anisotropic etching method. For removing a resist mask, a so-called ashing, which can be performed Without using a solvent, such as trichloro ethylene which poses a problem relating to the environmental pollution, is used.
The above-mentioned etching and ashing methods are both a dry process. So, they are suitable for process control or automatic processing and free from the contamination due to impurities in an etching solution or a solvent as in a wet process. An outline of these processes will now be explained with reference to FIGS. 1 and 2.
FIGS. 1(a), 1(b), and 1(c) show a change in the cross section of a member to be processed in the above-described dry etching and ashing processes. FIG. 2 schematically shows an example of the construction of a processing system for automatically performing the etching and ashing operations.
In the system in FIG. 2, a RIE apparatus 10 for etching aluminum films and an ashing apparatus 20 for removing resist masks after etching are connected to each other via a load lock chamber 13 which is capable of a vacuum. Aluminum films are transported by the load lock chamber 13 from the RIE apparatus 10 to the ashing apparatus 20 without contacting the atmosphere. Another load lock chamber 13A is disposed on the entry side of the RIE apparatus 10, and another load lock chamber 13B is disposed on the exit side of the ashing apparatus 20. Substrates on which aluminum films are formed can be inserted into or taken out of the RIE apparatus 10 and the ashing apparatus 20 without introducing air into the apparatuses 10 and 20 by the load lock chambers 13A and 13B.
Referring to FIG. 1(a) , for example, an aluminum film 2 is deposited on the whole of a surface of a substrate 1 composed of a silicon wafer, following which a resist is applied onto the aluminum film 2. By applying ultra-violet rays, electron beams, or an energy beam, such as excimer laser, or the like, to a predetermined position of this resist and then developing, a mask 3 composed of the aforesaid resist is formed. The surface of the substrate 1 on which the aluminum film 2 is formed is generally covered with an unillustrated insulation layer composed of SiO.sub.2, etc. The surface of the substrate 1 or a lower layer wiring is exposed inside a contact hole provided on a part of the insulation layer.
The substrate 1 with the mask 3 formed thereon as described above is placed on a stage 11 inside the RIE apparatus 10 through the load lock chamber 13A in FIG. 2. Then, for example, chlorine gas (Cl.sub.2) is introduced into the RIE apparatus 10 and, while the inside of such apparatus is being maintained at a predetermined pressure, a plasma is generated
REFERENCES:
patent: 4325984 (1982-04-01), Galfo et al.
patent: 4985113 (1991-01-01), Fujimoto et al.
patent: 5200017 (1993-04-01), Kawasaki et al.
Solid State Technology, vol. 33, No. 2 (Feb. 1990).
Extended Abstracts, vol. 81-2 (1981), pp. 715-716.
Japanese Patent Abstract of JP-A-1 251 742 (Jan. 1989).
Fujimura Shuzo
Harada Fukashi
Ishida Toshiyuki
Ito Takahiro
Kondo Tetsuo
Breneman R. Bruce
Fujitsu Limited
Goudreau George
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