Method for producing semiconductor elements

Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having specified scribe region structure

Reexamination Certificate

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C257SE21599

Reexamination Certificate

active

07485550

ABSTRACT:
A method for producing semiconductor elements comprises forming a hydrogen-correlated doping in a treatment region The treatment region comprises at least part of a region which (i) lies outside an inner contiguous zone containing an integrated semiconductor circuit arrangement but not respective associated separating zones and (ii) lies within an outer contiguous zone containing the respective integrated semiconductor circuit arrangement (10) and also the respective associated separating zones.

REFERENCES:
patent: 4325182 (1982-04-01), Tefft et al.
patent: 6372610 (2002-04-01), Chang et al.
patent: 6639280 (2003-10-01), Sugatani et al.
patent: 31 31 987 (1982-04-01), None
patent: 102 40 107 (2004-03-01), None

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