Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having specified scribe region structure
Reexamination Certificate
2005-06-24
2009-02-03
Zarneke, David A (Department: 2891)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
Having specified scribe region structure
C257SE21599
Reexamination Certificate
active
07485550
ABSTRACT:
A method for producing semiconductor elements comprises forming a hydrogen-correlated doping in a treatment region The treatment region comprises at least part of a region which (i) lies outside an inner contiguous zone containing an integrated semiconductor circuit arrangement but not respective associated separating zones and (ii) lies within an outer contiguous zone containing the respective integrated semiconductor circuit arrangement (10) and also the respective associated separating zones.
REFERENCES:
patent: 4325182 (1982-04-01), Tefft et al.
patent: 6372610 (2002-04-01), Chang et al.
patent: 6639280 (2003-10-01), Sugatani et al.
patent: 31 31 987 (1982-04-01), None
patent: 102 40 107 (2004-03-01), None
Mauder Anton
Niedernostheide Franz-Josef
Schulze Hans-Joachim
Infineon - Technologies AG
Maginot Moore & Beck
Zarneke David A
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