Method for producing semiconductor device

Details Method for producing semiconductor device Method for producing semiconductor device

2010-08-25

2011-11-08

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21632, C257SE21642

Reexamination Certificate

active

08053305

ABSTRACT:
The invention provides a method for producing a semiconductor device that can reduce the number of mask steps. In a CMOS production process, gate electrodes are formed in regions for forming an NMOS and a PMOS at the same time with a common mask pattern, and after the gate electrodes have been formed, a well, and source and drain regions are formed by impurity ion implantations with a common mask pattern in each region of the NMOS and the PMOS, using the gate electrode as a mask, whereby the number of mask steps is reduced.

REFERENCES:
patent: 2009/0159966 (2009-06-01), Huang
patent: 2009/0209077 (2009-08-01), Lowis
patent: 2010/0032774 (2010-02-01), Burgess et al.
patent: 2010/0289081 (2010-11-01), Griebenow
patent: 04-025168 (1992-01-01), None
patent: 04-188762 (1992-07-01), None
patent: 7-254645 (1995-10-01), None
patent: 2001-168207 (2001-06-01), None

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