Method for producing quantum dot silicate thin film for...

Details Method for producing quantum dot silicate thin film for... Method for producing quantum dot silicate thin film for...

2005-03-22

2005-03-22

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from liquid combined with preceding diverse...

C438S478000, C438S962000

Reexamination Certificate

active

06869864

ABSTRACT:
A method for producing a quantum dot silicate thin film for light emitting devices. The quantum dot silicate thin film is produced by introducing a silane compound having a functional group capable of interacting with a quantum dot and at least one reactive group for a sol-gel process into the surface of the quantum dot or a matrix material for dispersing the quantum dot, thereby exhibiting excellent mechanical and thermal stability.

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