Method for producing nonvolatile semiconductor memory device...

Details Method for producing nonvolatile semiconductor memory device... Method for producing nonvolatile semiconductor memory device...

2005-08-09

2005-08-09

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S595000

Reexamination Certificate

active

06927132

ABSTRACT:
Method for producing a nonvolatile semiconductor memory device includes forming a first insulating film on a semiconductor substrate, forming a floating gate electrode material film on the first insulating film, forming a second insulating film on the floating gate electrode material film, forming a control gate electrode material film on the second insulating film, forming a first mask film on the control gate electrode material film, the first mask film having slits extending along a first direction, forming sidewalls on the sides of the first mask film in the slits, and etching the control gate electrode material film, the second insulating film and the floating gate electrode material film using the first mask film and the sidewalls as a mask so as to form memory cells each of which includes a floating gate electrode and a control gate electrode.

REFERENCES:
patent: 5290723 (1994-03-01), Tani et al.
patent: 5661053 (1997-08-01), Yuan
patent: 6329685 (2001-12-01), Lee
patent: 6335243 (2002-01-01), Choi et al.
patent: 6355524 (2002-03-01), Tuan et al.
patent: 2000-174145 (2000-06-01), None
patent: 2002-083884 (2002-03-01), None
Wolf, “Silicon Processing for the VLSI Era”, vol. 1, pp. 182-194, 384-389.

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