Method for producing low defect density strained -Si channel...

Details Method for producing low defect density strained -Si channel... Method for producing low defect density strained -Si channel...

2007-04-10

2007-04-10

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C257SE21090

Reexamination Certificate

active

10838721

ABSTRACT:
A silicon strained channel MOSFET device and method for forming the same the method providing improved wafer throughput and low defect density including the steps of providing a silicon substrate; epitaxially growing a first silicon layer using at least one deposition precursor selected from the group consisting of disilane, trisilane, dichlorosilane, and silane; epitaxially growing a step-grade SiGe buffer layer over and contacting the first silicon layer using at least one deposition precursor selected from the group consisting of disilane and trisilane; epitaxially growing a SiGe capping layer over and contacting the step-grade SiGe buffer layer using at least one deposition precursor selected from the group consisting of disilane and trisilane; and, epitaxially growing a second silicon layer using at least one deposition precursor selected from the group consisting of disilane, trisilane, dichlorosilane, and silane.

REFERENCES:
patent: 6900115 (2005-05-01), Todd
patent: 6982208 (2006-01-01), Lee et al.
patent: 2004/0238885 (2004-12-01), Bedell et al.

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