Method for producing field effect type semiconductor device

Details Method for producing field effect type semiconductor device Method for producing field effect type semiconductor device

1985-03-28

1986-03-25

Kittle, John E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430312, 430314, 430315, 430317, 430319, 430394, G03C 500

Patent

active

045783438

ABSTRACT:
A method for producing a field effect type semiconductor device includes the steps of forming a semiconductor active layer on a substrate, forming a resist layer on the semiconductor active layer, exposing a first portion of the resist layer in accordance with a gate electrode pattern, carrying out auxiliary exposure of a second portion near the first portion after or before the exposure of the first portion. The method further includes developing the exposed resist layer, forming a recess in the semiconductor active layer by etching the exposed semiconductor active layer using the resist layer as a mask and forming a gate electrode on the surface of the recess using the resist layer as a mask. This method improves the series resistance between the source electrode and the gate electrode, and also improves the Schottky withstand voltage between the drain electrode and the gate electrode.

REFERENCES:
patent: 3951708 (1976-04-01), Dean
patent: 4341850 (1982-07-01), Coane
patent: 4362809 (1982-12-01), Chen et al.
Fukui et al., IEEE Trans Electron Devices, vol. ED-27, No. 6, Jun. 1980, pp. 1034-1037.
Ohata et al., IEEE Trans. Electron Devices, vol. ED-27, No. 6, Jun. 1980, pp. 1029-1034.
Patent Abstracts of Japan, vol. 2, No. 90, Jul. 22, 1978, pps. 4183E78.

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