Method for producing dual work function CMOS device

Details Method for producing dual work function CMOS device Method for producing dual work function CMOS device

1996-08-29

1998-06-23

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438548, 438563, 438564, 438168, 438216, 438312, 438324, H01L 218238

Patent

active

057704902

ABSTRACT:
A dual work function CMOS device and method for producing the same is disclosed. The method includes: depositing a first layer of a doped material, either n-type or p-type, over a substrate to be doped; defining the areas that are to be oppositely doped; depositing a second layer of an oppositely doped material over the entire surface; and subjecting the entire CMOS device to a high temperature, drive-in anneal. The drive-in anneal accelerates the diffusion of the dopants into the adjacent areas, thereby doping the gate polysilicon and channels with the desired dopants. A nitride barrier layer may be utilized to prevent the second dopant from diffusing through the first layer and into the substrate beneath.

REFERENCES:
patent: 4755478 (1988-07-01), Abernathe et al.
patent: 5190888 (1993-03-01), Schwalke et al.
patent: 5329138 (1994-07-01), Mitani et al.
patent: 5464789 (1995-11-01), Saito
patent: 5465000 (1995-11-01), Williams
IBM Technical Disclosure Bulletin.backslash.vol. 31 No. 7.backslash.Dec. 1988.backslash.Dual Work Function Doping.
IBM Technical Disclosure Bulletin.backslash.Vo.26 No. 10A.backslash.Mar. 1984.backslash.Oxidizable P-Channel Gate Electrode.
Dialog 1996 Derwent Info. Ltd..backslash.Mar. 1996.backslash.p. 2.backslash.JP 6283725.
BU889-0198.backslash.Low Reistivity Stack for Dual Doped Polysilicon Gate Electrode.backslash.Jun. 1991. No. 326.backslash.Kenneth Mason Publications Ltd., England.

Affiliated with

Also associated with

Rating

Method for producing dual work function CMOS device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing dual work function CMOS device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing dual work function CMOS device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1394229