Method for producing an oxide confined semiconductor laser

Details Method for producing an oxide confined semiconductor laser Method for producing an oxide confined semiconductor laser

2005-12-14

2008-08-26

Luu, Chuong A. (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S298000, C438S623000, C438S645000

Reexamination Certificate

active

07416930

ABSTRACT:
A method for producing an oxide confined semiconductor laser uses a dual platform to synchronously produce a light emitting active area and a wire bonding area on a semiconductor material and use a metal protective material, an electrically conductive metal material, and a dielectric material together with an etching process, an oxide confined technology, and plating technology to produce the dual platform, an oxide layer, a dielectric layer, a protective layer, and a metal layer. The light emitting active area platform and the wire bonding area platform are independent, and the wire bonding area platform is produced on the semiconductor structure, such that an ion implant process can adjust the capacitance and provide a higher wire bonding strength. Since the electric layer is filled on the external sides of the dual platforms, the wire connected metal capacitance is lowered, and the planarization facilitates the production of the metal layer.

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