Method for producing an integrated circuit with a trench...

Details Method for producing an integrated circuit with a trench... Method for producing an integrated circuit with a trench...

2007-09-26

2009-10-06

Nguyen, Ha Tran T (Department: 4116)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S341000, C257S330000, C438S546000, C438S549000

Reexamination Certificate

active

07598143

ABSTRACT:
A method for producing an integrated circuit including a semiconductor and in one embodiment a trench transistor structure, is disclosed. A first diffusion method is carried out. A second diffusion method is carried out, by which dopant atoms of a second conduction type are introduced via a first side into a mesa region and into a component region, which form a source zone in the mesa region, the diffusion methods being coordinated with one another in such a way that the dopant atoms of a second conduction type indiffuse further than the dopant atoms of a first conduction type from the first diffusion method, in the vertical direction in the component region and indiffuse not as far as the dopant atoms of the first conduction type in the vertical direction in the mesa region.

REFERENCES:
patent: 7413969 (2008-08-01), Kim et al.
patent: 2005/0079676 (2005-04-01), Mo et al.
patent: 2006/0124997 (2006-06-01), Yamauchi et al.
patent: 10355588 (2005-06-01), None
patent: 03034500 (2003-04-01), None

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