Method for producing an integrated circuit including a...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S268000, C438S371000, C438S272000, C438S156000, C438S158000, C438S209000, C438S212000, C257S302000, C257S397000, C257SE27096

Reexamination Certificate

active

07858478

ABSTRACT:
A method for producing an integrated circuit including a trench transistor and an integrated circuit is disclosed.

REFERENCES:
patent: 5258634 (1993-11-01), Yang
patent: 5648283 (1997-07-01), Tsang et al.
patent: 6160288 (2000-12-01), Yamada
patent: 6465843 (2002-10-01), Hirler et al.
patent: 6649974 (2003-11-01), Werner et al.
patent: 6800904 (2004-10-01), Fujishima et al.
patent: 6858500 (2005-02-01), Sugi et al.
patent: 7202525 (2007-04-01), Kinzer
patent: 2001/0053568 (2001-12-01), Deboy et al.
patent: 2002/0135008 (2002-09-01), Hirler
patent: 2003/0085430 (2003-05-01), Hao et al.
patent: 2004/0038467 (2004-02-01), Darwish et al.
patent: 2004/0157384 (2004-08-01), Blanchard
patent: 2006/0049453 (2006-03-01), Schmitz et al.

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