Method for producing an integrated circuit

Details Method for producing an integrated circuit Method for producing an integrated circuit

2006-08-01

2006-08-01

Gurley, Lynne A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S243000, C438S244000, C438S250000, C438S256000, C438S386000, C438S387000, C438S396000, C438S399000

Reexamination Certificate

active

07084027

ABSTRACT:
The invention relates to a method for producing an integrated circuit comprising the following steps: preparing a semi-conductor substrate (1) with a contacting circuit area (SS); providing an insulating layer (IS) on the surface of the semi-conductor substrate (1): providing a contact hole (KL) in the insulating layer (IS) for making contacting the circuit area (SS); providing an insulating spacer area (10′) in at least the area above the contact hole (KL); providing at least three trenches (BG1; BG2; BG3), the first (BG1) of which is arranged next to the contact hole (KL), a second (BG2) is disposed across the contact hole (KL) and a third (BG3) is next to the contact hole (KL). The spacer area (10′) is placed between the first and the second trench (BG1; BG2) and the second and the third trench (BG2; BG3); filling the trenches (BG1; BG2; BG3) with a conductive material; and chemical-mechanical polishing of conductive material for producing three separated trenches (BL1; BL2; BL3).

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