Method for producing an electromagnetic radiation-emitting...

Details Method for producing an electromagnetic radiation-emitting... Method for producing an electromagnetic radiation-emitting...

2007-03-27

2007-03-27

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Reexamination Certificate

active

10524186

ABSTRACT:
In a method of fabricating a radiation-emitting semiconductor chip based on AlGaInP, comprising the method steps of preparing a substrate, applying to the substrate a semiconductor layer sequence comprising a photon-emitting active layer, and applying a transparent decoupling layer comprising(Gax(InyAl1−y)1−xP wherein 0.8≦x and 0≦y≦1, it is provided according to the invention that the substrate is made of germanium and that the transparent decoupling layer is applied at low temperature.

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Modak, P. et al., “InAlGaP Microcavity LEDs on Ge-substrates”,Journal of Crystal Growth, vol. 221, pp. 668-673, 2000.
Wang, XL. Et al., “Si and Zn Doping of GaP Grown by OMVPE Using Tretiarybutylphosphine”,Journal of Crystal Growth, vol. 158, pp. 49-52, 1996.

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