Method for producing a transistor gate with...

Details Method for producing a transistor gate with... Method for producing a transistor gate with...

2011-05-24

2011-05-24

Nguyen, Khiem D (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S259000, C438S270000, C438S285000, C438S590000, C438S779000, C257SE21038

Reexamination Certificate

active

07947545

ABSTRACT:
A method of fabricating a semiconductor device, the method comprises forming a mask layer over a compound semiconductor substrate; and patterning a photoresist over the mask layer. The method comprises etching a portion of the mask layer beneath the photoresist; forming a hardmask over the substrate and not over the mask layer; removing the mask layer; etching to form and opening down to the substrate; and forming a gate in the opening.

REFERENCES:
patent: 5445979 (1995-08-01), Hirano
patent: 5719088 (1998-02-01), Huang et al.
patent: 5930610 (1999-07-01), Lee
patent: 6153499 (2000-11-01), Anda et al.
patent: 7422971 (2008-09-01), Murthy et al.
patent: 2005/0127398 (2005-06-01), Taniguchi et al.
patent: 2005/0282393 (2005-12-01), Cheng et al.
patent: 2006/0194367 (2006-08-01), Tanida et al.
patent: 2006/0226442 (2006-10-01), Zhang et al.

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