Method for producing a transistor

Details Method for producing a transistor Method for producing a transistor

1997-01-17

1998-09-29

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438486, H01L 2184

Patent

active

058145400

ABSTRACT:
In a thin film transistor, the reliability, yield and characteristics are improved by preventing the wire breaking of gate electrodes and wirings and the breakdown of a gate insulating film. Materials having at least one element of nickel, iron, cobalt and platinum are selectively formed closely on or beneath an amorphous silicon thin film formed on a substrate, and the materials are selectively crystallized, and the crystallized regions thus obtained are used as a channel forming region and impurity regions of a thin film transistor, and further an isolation between the thin film transistors is performed by the uncrystallized region.

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A. V. Dvurechenskii et al., "Transport Phenomena in Amorphous Silicon Doped by Ion Implantation of 3d Metals", Akademikian Lavrentev Prospekt 13, 630090 Novosibirsk 90, USSR, pp. 635-640.
T. Hempel et al., "Needle-Like Crystallization of Ni Doped Amorphous Silicon Thin Films", Solid State Communications, vol. 85, No. 11, pp. 921-924, 1993.

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