Method for producing a spacer structure

Details Method for producing a spacer structure Method for producing a spacer structure

2007-01-30

2007-01-30

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S299000, C438S301000, C438S287000, C438S279000, C438S305000, C438S514000, C438S696000, C438S197000, C438S153000, C438S154000, C438S186000, C438S184000, C438S369000, C438S365000, C438S366000, C257SE21167

Reexamination Certificate

active

10519201

ABSTRACT:
A method for fabricating a spacer structure includes: forming a gate insulation layer having a gate deposition-inhibiting layer, a gate layer and a covering deposition-inhibiting layer on a semiconductor substrate, and patterning the gate layer and the covering deposition-inhibiting layer in order to form gate stacks. An insulation layer is deposited selectively using the deposition-inhibiting layers, thereby permitting highly accurate formation of the spacer structure.

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D. Widmann, H. Mader and H. Friedrich, “Technologie hochintegrierter Schaltungen” pp. 62-67, Jun. 1996.

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